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  cs202-4b cs202-4d CS202-4M cs202-4n 4.0 amp scr 200 thru 800 volts to-202 thyristor case central semiconductor corp. tm r3 (14-september 2004) description: the central semiconductor cs202-4b series type is an epoxy molded silicon controlled rectifier designed for sensing circuit applications and control systems. marking code: full part number maximum ratings: (t c =25c unless otherwise noted) symbol cs202 cs202 cs202 cs202 -4b -4d -4m -4n units peak repetitive off-state voltage v drm, v rrm 200 400 600 800 v rms on-state current (t c =85c) i t(rms) 4.0 a peak one cycle surge (t=10ms) i tsm 30 a i 2 t value for fusing (t=10ms) i 2 t 4.5 a 2 s peak gate power (tp=20s) p gm 3.0 w average gate power dissipation p g(av) 0.2 w peak gate current (tp=20s) i gm 1.2 a critical rate of rise of on-state current di/dt 50 a/s storage temperature t stg -40 to +150 c junction temperature t j -40 to +125 c thermal resistance ja 80 c/w thermal resistance jc 7.5 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i drm, i rrm rated v drm, v rrm, r gk =1k ? 10 a i drm, i rrm rated v drm , v drm, r gk =1k ?, t c =125c 200 a i gt v d =12v, r l =10 ? 20 38 200 a i h i t =50ma, r gk =1k ? 0.25 2.0 ma v gt v d =12v, r l =10 ? 0.55 0.8 v v tm i tm =8.0a, tp=380s 1.6 1.8 v dv/dt v d = 2 / 3 v drm, r gk =1k ?, t c =125c 10 v/s
min max min max a 0.057 0.061 1.45 1.55 b 0.019 0.021 0.49 0.52 c 0.175 0.180 4.44 4.56 d 0.376 0.388 9.55 9.85 e 0.118 0.134 3.00 3.40 f (dia) 0.124 0.126 3.15 3.20 g 0.035 0.043 0.90 1.10 h 0.023 0.028 0.59 0.71 j 0.098 0.102 2.49 2.59 k 0.459 0.559 11.66 14.21 l 0.280 0.301 7.12 7.65 m 0.406 0.425 10.30 10.80 n 0.024 0.059 0.60 1.50 to-202 thyristor (rev: r0) dimensions symbol inches millimeters central semiconductor corp. tm to-202 thyristor case - mechanical outline cs202-4b cs202-4d CS202-4M cs202-4n 4.0 amp scr 200 thru 800 volts r3 (14-september 2004) lead code: 1) cathode 2) anode 3) gate note: tab is common to pin 2 (anode) marking code: full part number


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